UNR921MG0L
TRANS PREBIAS NPN 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR921MG0L is a pre-biased NPN bipolar junction transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is rated at 150MHz, and it dissipates a maximum power of 125mW. The internal base resistor (R1) is 2.2 kOhms and the emitter base resistor (R2) is 47 kOhms, providing a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The transistor type is NPN with integrated bias resistors. It is supplied in the SSMini3-F3 package, a surface mount configuration suitable for SC-89 and SOT-490 footprints, and is available on tape and reel. This component finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |