UNR921LJ0L
TRANS PREBIAS NPN 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components NPN Pre-Biased Transistor, UNR921LJ0L. This SSMini3-F1 packaged device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The transition frequency is rated at 150MHz, with a maximum power dissipation of 125mW. Internal base resistors (R1) of 4.7 kOhms and emitter base resistors (R2) of 4.7 kOhms are integrated. The minimum DC current gain (hFE) is 20 at 5mA, 10V. Collector cutoff current is specified at a maximum of 500nA. Saturation voltage (Vce Sat) is 250mV maximum at 300µA base current and 10mA collector current. This component is suitable for applications in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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