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UNR9216J0L

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UNR9216J0L

TRANS PREBIAS NPN 50V SSMINI3

Manufacturer: Panasonic Electronic Components

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components NPN Pre-Biased Transistor, UNR9216J0L. This SSMini3-F1 packaged bipolar junction transistor features an NPN configuration with integrated base bias resistors. It is rated for a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is 150MHz, and the maximum power dissipation is 125mW. Key parameters include a minimum DC current gain (hFE) of 160 at 5mA/10V, a base resistor (R1) of 4.7 kOhms, and a Vce saturation of 250mV at 300µA/10mA. The collector cutoff current is a maximum of 500nA. This component is suitable for surface mount applications and is supplied on tape and reel. It finds application in industrial automation, consumer electronics, and communication systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Supplier Device PackageSSMini3-F1
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max125 mW
Frequency - Transition150 MHz
Resistor - Base (R1)4.7 kOhms

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