UNR9212J0L
TRANS PREBIAS NPN 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR9212J0L is an NPN pre-biased bipolar junction transistor (BJT). This device operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor features integrated base resistors (R1 = 22 kOhms) and emitter base resistors (R2 = 22 kOhms), simplifying circuit design. It offers a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V collector-emitter voltage, with a transition frequency of 150MHz. Maximum power dissipation is 125mW. The UNR9212J0L is provided in a surface-mount SSMini3-F1 package, also known as SC-89 or SOT-490, supplied on tape and reel. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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