UNR911NJ0L
TRANS PREBIAS PNP 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR911NJ0L is a PNP pre-biased bipolar junction transistor (BJT) in an SSMini3-F1 package. This surface mount device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a transition frequency of 80 MHz. The transistor includes integrated bias resistors, specifically R1 at 4.7 kOhms and R2 at 47 kOhms, simplifying circuit design. Maximum power dissipation is rated at 125 mW. This component is commonly utilized in industrial automation, consumer electronics, and communication systems requiring compact, pre-configured transistor solutions. The UNR911NJ0L is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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