UNR911NG0L
TRANS PREBIAS PNP 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR911NG0L is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This SSMini3-F3 packaged component features a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. It offers a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a transition frequency of 80 MHz. The internal base resistor (R1) is rated at 4.7 kOhms, and the emitter base resistor (R2) is 47 kOhms. With a maximum power dissipation of 125 mW and a Vce saturation of 250 mV at 300 µA and 10 mA, this transistor is suitable for various applications in consumer electronics, industrial control, and automotive systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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