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UNR911BG0L

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UNR911BG0L

TRANS PREBIAS PNP 50V SSMINI3

Manufacturer: Panasonic Electronic Components

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components UNR911BG0L is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The UNR911BG0L offers a minimum DC current gain (hFE) of 160 at 5 mA and 10 V, with a transition frequency of 80 MHz. It is packaged in the SSMini3-F3 (SC-89, SOT-490) and supplied on tape and reel. The device includes an integrated base resistor (R1) of 100 kOhms. This transistor type is suitable for signal switching and amplification in various electronic systems, including industrial automation and consumer electronics. The maximum power dissipation is 125 mW.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Supplier Device PackageSSMini3-F3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max125 mW
Frequency - Transition80 MHz
Resistor - Base (R1)100 kOhms

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