UNR9119J0L
TRANS PREBIAS PNP 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR9119J0L is a PNP pre-biased bipolar junction transistor with a collector-emitter breakdown voltage of 50V. Designed for surface mount applications, this component features a 125mW power dissipation and a transition frequency of 80MHz. The device offers a minimum DC current gain (hFE) of 30 at 5mA collector current and 10V collector-emitter voltage. It includes integrated base resistor R1 of 1kO and emitter base resistor R2 of 10kO, simplifying circuit design. The saturation voltage Vce(sat) is a maximum of 250mV at 300µA base current and 10mA collector current. Its compact SSMini3-F1 package (SC-89, SOT-490) makes it suitable for use in portable electronics and automotive control systems. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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