UNR9112J0L
TRANS PREBIAS PNP 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR9112J0L is a PNP pre-biased bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V collector-emitter voltage. Its transition frequency is 80 MHz. The integrated base resistor (R1) is 22 kOhms, and the emitter-base resistor (R2) is 22 kOhms, providing a pre-biased configuration. The device is supplied in a SSMini3-F1 package, also known as SC-89 or SOT-490, and is available on tape and reel. The maximum power dissipation is 125 mW. This transistor is suitable for use in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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