UNR52AFG0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR52AFG0L is an NPN pre-biased bipolar transistor. This device features a Collector-Emitter Breakdown Voltage of 50 V and a maximum Collector Current of 80 mA. The transistor offers a transition frequency of 150 MHz and a maximum power dissipation of 150 mW. It is packaged in an SMini3-F2 (SC-85) surface mount package, supplied on tape and reel. The integrated base resistors consist of R1 at 4.7 kOhms and R2 at 10 kOhms. This pre-biased configuration simplifies circuit design for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |