UNR52A8G0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR52A8G0L is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a breakdown voltage of 50V, a maximum collector current of 80mA, and a transition frequency of 150MHz. It includes integrated base and emitter resistors (R1 = 510 Ohms, R2 = 5.1 kOhms) for simplified circuit design. The transistor type is NPN - Pre-Biased, with a minimum DC current gain (hFE) of 20 at 5mA, 10V. Maximum power dissipation is 150mW. The SMini3-F2 package, also known as SC-85, is supplied on tape and reel. This device is suitable for use in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 510 Ohms |
| Resistor - Emitter Base (R2) | 5.1 kOhms |
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