UNR52A4G0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components UNR52A4G0L is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50V, a continuous collector current (Ic) capability of up to 80mA, and a transition frequency (fT) of 150MHz. The integrated base resistors are R1 (10 kOhms) and R2 (47 kOhms), providing a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. The power dissipation is rated at 150mW. This component is supplied in a SMini3-F2 package (SC-85) for surface mounting and is available on tape and reel. The Panasonic Electronic Components UNR52A4G0L is utilized in various applications, including consumer electronics, industrial automation, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |