UNR52A1G0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR52A1G0L is an NPN Pre-Biased Bipolar Transistor in a SMini3-F2 package. This device provides a pre-configured bias network, simplifying circuit design and reducing component count for applications requiring a stable switching or amplification function. It features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 80 mA. With a transition frequency of 150 MHz and a power dissipation of 150 mW, it is suitable for various signal processing and control tasks. The integrated base resistors (R1 = 10 kOhms, R2 = 10 kOhms) ensure predictable operation. This component is commonly utilized in consumer electronics and industrial automation. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |