UNR521LG0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR521LG0L is an NPN pre-biased bipolar junction transistor. This SMini3-F2 packaged device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 150MHz and a power dissipation of 150mW. The integrated base bias resistors consist of R1 at 4.7 kOhms and R2 at 4.7 kOhms, providing a minimum DC current gain (hFE) of 20 at 5mA and 10V. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The collector cutoff current is rated at a maximum of 500nA. This component is commonly utilized in industrial and consumer electronics applications requiring simple switching and amplification circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |