UNR521FG0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR521FG0L is an NPN pre-biased bipolar junction transistor (BJT) in an SMini3-F2 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 150MHz and a maximum power dissipation of 150mW. The internal base resistor (R1) is 4.7 kOhms, and the emitter base resistor (R2) is 10 kOhms, providing a minimum DC current gain (hFE) of 30 at 5mA collector current and 10V Vce. Collector cutoff current is rated at a maximum of 500nA. Vce saturation is 250mV at 300µA base current and 10mA collector current. This component is supplied on tape and reel and is suitable for surface mount applications. It finds use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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