UNR5215G0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components UNR5215G0L is an NPN pre-biased bipolar junction transistor. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 150MHz and a power dissipation of 150mW. The transistor type is NPN with integrated base resistor R1 at 10 kOhms, providing a minimum DC current gain (hFE) of 160 at 5mA, 10V. Saturation voltage (Vce) is a maximum of 250mV at 300µA, 10mA. The device is supplied in a SMini3-F2 package, suitable for surface mounting and delivered on tape and reel. This component is commonly utilized in consumer electronics and industrial automation applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |