UNR5214G0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR5214G0L is a pre-biased NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification. This SMini3-F2 packaged device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Featuring integrated base resistors (R1 = 10 kOhms, R2 = 47 kOhms), it simplifies circuit design by providing a fixed bias. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V, and a transition frequency of 150 MHz. With a maximum power dissipation of 150 mW, it is suitable for surface mount applications. The UNR5214G0L is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |