UNR5210G0L
TRANS PREBIAS NPN 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR5210G0L is an NPN pre-biased bipolar transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is specified at 150MHz, with a maximum power dissipation of 150mW. The transistor type is NPN with integrated bias resistors, including a base resistor (R1) of 47 kOhms. It offers a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The UNR5210G0L is supplied in a SMini3-F2 package, a SMini3 surface mount configuration, and is delivered on tape and reel (TR). This component is utilized in various industrial applications requiring simplified circuit design and reduced component count.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |