UNR51AMG0L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components UNR51AMG0L is a PNP pre-biased bipolar junction transistor. This SMini3-F2 packaged device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. It features a transition frequency of 80MHz and a maximum power dissipation of 150mW. Integrated base resistors of 2.2 kOhms (R1) and 47 kOhms (R2) are included for simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage, with a saturation voltage (Vce) of 250mV at 300µA base current and 10mA collector current. This component is suitable for applications in consumer electronics and industrial automation. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-85 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |