UNR511N00L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR511N00L is a PNP pre-biased bipolar junction transistor. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 and R2, are specified at 4.7 kOhms and 47 kOhms respectively, simplifying circuit design. With a transition frequency of 80 MHz and a minimum DC current gain (hFE) of 80 at 5mA and 10V, it is suitable for general-purpose amplification and switching applications. The transistor is housed in a SMini3-G1 surface mount package, specifically SC-70, SOT-323, and is supplied on tape and reel. Maximum power dissipation is 150mW. This component is commonly utilized in industrial automation, consumer electronics, and automotive control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SMini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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