UNR511E00L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR511E00L, a PNP pre-biased bipolar junction transistor, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. This device features an 80MHz transition frequency and a power dissipation of 150mW. The integrated base resistors, R1 at 47 kOhms and R2 at 22 kOhms, simplify circuit design. With a minimum DC current gain (hFE) of 60 at 5mA and 10V, and a Vce saturation of 250mV at 300µA and 10mA, this transistor is suitable for applications requiring simplified biasing and signal amplification. The UNR511E00L is supplied in a SMini3-G1 package, designed for surface mounting and delivered on tape and reel. This component finds application in various industrial and consumer electronics, including control circuits and signal switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SMini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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