UNR511900L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR511900L is a PNP pre-biased bipolar junction transistor. This SMini3-G1 packaged device features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The internal base resistor (R1) is 1 kOhms, and the emitter-base resistor (R2) is 10 kOhms, providing a minimum DC current gain (hFE) of 30 at 5 mA collector current and 10 V Vce. With a transition frequency of 80 MHz and a maximum power dissipation of 150 mW, this surface-mount component is suitable for applications requiring simplified biasing configurations in areas such as consumer electronics and industrial control. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | SMini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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