UNR511800L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR511800L is a PNP pre-biased bipolar junction transistor (BJT) in a SMini3-G1 package, suitable for surface mounting. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 80MHz and a maximum power dissipation of 150mW. The internal base resistors are specified as R1 = 510 Ohms and R2 = 5.1 kOhms, providing a typical DC current gain (hFE) of 20 at 5mA and 10V. The part exhibits a Vce saturation of 250mV at 300µA and 10mA, with a collector cutoff current of 500nA. This device is commonly employed in portable electronics and industrial control applications. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | SMini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 510 Ohms |
| Resistor - Emitter Base (R2) | 5.1 kOhms |
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