UNR511600L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR511600L is a PNP pre-biased bipolar junction transistor. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 150MHz and a maximum power dissipation of 150mW. The transistor is housed in an SMini3-G1 package, suitable for surface mounting. Key specifications include a minimum DC current gain (hFE) of 160 at 5mA, 10V, and a base resistor (R1) of 4.7kOhms. The Vce saturation is 250mV at 300µA, 10mA, with a collector cutoff current of 500nA. This device is commonly utilized in industrial and consumer electronics applications requiring precise signal switching and amplification. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SMini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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