UNR511200L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR511200L is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. The built-in base resistor (R1) is 22 kOhms, and the emitter base resistor (R2) is 22 kOhms, providing a defined bias point. With a transition frequency of 80 MHz and a power dissipation of 150 mW, it is suitable for general-purpose switching and amplification circuits. The DC current gain (hFE) is a minimum of 60 at 5 mA collector current and 10 V Vce. The device is supplied in the SMini3-G1 package, also known as SC-70 or SOT-323, and is available on tape and reel. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SMini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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