UNR511100L
TRANS PREBIAS PNP 50V SMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR511100L is a PNP pre-biased bipolar junction transistor (BJT). This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 80MHz and a power dissipation of 150mW, it is suitable for applications requiring moderate switching speeds and power handling. The integrated base resistors, R1 and R2, are both specified at 10 kOhms, simplifying circuit design. The transistor type is PNP pre-biased, and it is supplied in a SMini3-G1 package, also known as SC-70 or SOT-323, for surface mount applications. The UNR511100L is typically used in industrial automation, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SMini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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