UNR421K00A
TRANS PREBIAS NPN 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR421K00A is a pre-biased NPN bipolar transistor. This NS-B1 series component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a transition frequency of 150MHz and a maximum power dissipation of 300mW. The internal base resistors are configured with R1 at 10 kOhms and R2 at 4.7 kOhms, facilitating simplified circuit design. The transistor type is NPN with pre-bias, and it exhibits a minimum DC current gain (hFE) of 20 at 5mA and 10V. Saturation voltage (Vce Sat) is specified at a maximum of 250mV at 300µA base current and 10mA collector current. The component is supplied in a 3-SIP package suitable for through-hole mounting and is available in Tape & Box packaging. This device is commonly employed in industrial automation and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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