UNR421900A
TRANS PREBIAS NPN 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR421900A is an NPN pre-biased bipolar transistor with a collector-emitter breakdown voltage of 50V. This through-hole component, packaged as a 3-SIP (NS-B1), offers a maximum collector current of 100mA and a transition frequency of 150MHz. It features internal base resistors R1 (1 kOhm) and R2 (10 kOhm), providing a minimum DC current gain (hFE) of 30 at 5mA collector current and 10V collector-emitter voltage. The device dissipates a maximum power of 300mW. Applications include digital logic circuits and general-purpose switching where simplified biasing is beneficial. This component is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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