UNR421200A
TRANS PREBIAS NPN 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR421200A is a pre-biased NPN bipolar transistor designed for simplified circuit implementation. This component features internal base resistors (R1 = 22 kOhms, R2 = 22 kOhms) facilitating direct connection to logic signals or other voltage sources for biasing. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a transition frequency of 150 MHz and a maximum power dissipation of 300 mW, the UNR421200A is suitable for applications in consumer electronics and industrial control systems. The DC current gain (hFE) is a minimum of 60 at 5 mA collector current and 10V Vce. The component is supplied in a 3-SIP package, available in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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