UNR421100A
TRANS PREBIAS NPN 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components UNR421100A is an NPN - Pre-Biased bipolar transistor. This through-hole component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a transition frequency of 150 MHz and a maximum power dissipation of 300 mW. The internal base resistance (R1) is 10 kOhms, and the emitter base resistance (R2) is also 10 kOhms, providing a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V collector-emitter voltage. The NS-B1 package is supplied in Tape & Box (TB) packaging. This transistor is commonly utilized in industrial and consumer electronics applications for switching and amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
UNR52A0G0L
TRANS PREBIAS NPN 50V SMINI3
DRC2144T0L
TRANS PREBIAS NPN 50V 0.1A MINI3
DRC2123J0L
TRANS PREBIAS NPN 50V 0.1A MINI3
