UNR42100RA
TRANS PREBIAS NPN 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR42100RA is an NPN pre-biased bipolar junction transistor (BJT) in the NS-B1 package. This through-hole component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is rated at 150 MHz, with a maximum power dissipation of 300mW. A base resistor (R1) of 47 kOhms is integrated into the device. Typical applications include logic circuits, switching applications, and general-purpose amplification, commonly found in industrial automation and consumer electronics. The device is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
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