UNR412400A
TRANS PREBIAS PNP 50V NS-A1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components PNP Pre-Biased Transistor, UNR412400A, offers a robust solution for general-purpose switching and amplification applications. This Through Hole component, housed in a 3-SSIP package (NS-A1), features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. With a transition frequency of 200MHz and a maximum power dissipation of 300mW, it is suitable for use in consumer electronics and industrial control systems. The integrated base bias resistors, R1 at 2.2 kOhms and R2 at 10 kOhms, simplify circuit design. The device exhibits a minimum DC current gain (hFE) of 60 at 100mA and 10V, with a collector cutoff current of 1µA. Provided in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SSIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 10V |
| Supplier Device Package | NS-A1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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