UNR411F00A
TRANS PREBIAS PNP 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR411F00A is a PNP pre-biased bipolar transistor designed for applications requiring simplified circuit design. This through-hole component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The integrated base resistors, R1 at 4.7 kOhms and R2 at 10 kOhms, provide built-in bias, facilitating faster prototyping and board assembly. With a transition frequency of 80 MHz and a power dissipation of 300 mW, it is suitable for signal switching and amplification in various industrial automation and consumer electronics systems. The device offers a minimum DC current gain (hFE) of 30 at 5mA, 10V, and a saturation voltage of 250mV at 300µA, 10mA. Packaged in a 3-SIP format, it is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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