UNR411400A
TRANS PREBIAS PNP 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR411400A is a PNP pre-biased bipolar transistor. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current of up to 100mA. The transistor features a transition frequency of 80MHz and a maximum power dissipation of 300mW. It is configured with an internal base resistor (R1) of 10 kOhms and an emitter base resistor (R2) of 47 kOhms, providing a DC current gain (hFE) of at least 80 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. This device is supplied in a 3-SIP package, suitable for through-hole mounting and available in Cut Tape (CT) packaging. Applications include general-purpose switching and amplification circuits in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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