UNR411300A
TRANS PREBIAS PNP 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components' UNR411300A is a PNP pre-biased bipolar junction transistor. This through-hole component, packaged in a 3-SIP (NS-B1), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a transition frequency of 80MHz and dissipates a maximum of 300mW. The integrated base resistors, R1 at 47 kOhms and R2 at 47 kOhms, simplify circuit design. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at a maximum of 250mV at 300µA base current and 10mA collector current, with a collector cutoff current of 500nA. This transistor is commonly utilized in industrial automation and consumer electronics applications. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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