UNR411200A
TRANS PREBIAS PNP 50V NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR411200A is a PNP pre-biased bipolar junction transistor. This device offers a 50V collector-emitter breakdown voltage and a continuous collector current capability of 100mA. The transistor features an 80MHz transition frequency and a maximum power dissipation of 300mW. Integrated base resistors of 22 kOhms (R1) and 22 kOhms (R2) are included for simplified circuit design. The UNR411200A is specified with a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current, with a collector cutoff current of 500nA. The component is supplied in a 3-SIP package, with tape and reel packaging available. This transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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