UNR32AMG0L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR32AMG0L is an NPN pre-biased bipolar junction transistor (BJT). This component features integrated base resistors, specifically R1 at 2.2 kOhms and R2 at 47 kOhms, simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 80 mA. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a transition frequency of 150 MHz. Power dissipation is rated at 100 mW. The UNR32AMG0L is supplied in a SSSMini3-F2 (SOT-723) surface mount package and is supplied on tape and reel. This device is commonly utilized in consumer electronics and industrial automation applications requiring compact signal amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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