UNR32AB00L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR32AB00L is a pre-biased NPN bipolar junction transistor (BJT) designed for surface-mount applications. This component offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 80 mA. It features a transition frequency of 150 MHz, making it suitable for various signal processing tasks. The device includes an integrated base resistor (R1) of 100 kOhms, simplifying circuit design for applications requiring a fixed bias. The SSSMini3-F1 package provides a compact footprint for high-density circuit boards. With a maximum power dissipation of 100 mW and a typical DC current gain (hFE) of 160 at 5 mA collector current and 10 V Vce, the UNR32AB00L is utilized in industrial automation, consumer electronics, and telecommunications equipment. The transistor is supplied in a Tape & Reel (TR) configuration.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F1 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 100 kOhms |
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