UNR32AAG0L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR32AAG0L is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 80mA. It operates with a transition frequency of 150MHz and has a power dissipation rating of 100mW. The internal bias resistors are specified as R1 (Base) at 100 kOhms and R2 (Emitter Base) at 100 kOhms. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at a maximum of 250mV at 300µA base current and 10mA collector current. The UNR32AAG0L is supplied in a SSSMini3-F2 package, compatible with SOT-723 footprints, and is delivered on tape and reel. This transistor is commonly utilized in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 100 kOhms |
| Resistor - Emitter Base (R2) | 100 kOhms |
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