UNR32A5G0L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR32A5G0L is an NPN pre-biased bipolar transistor designed for surface mount applications. This SSSMini3-F2 packaged component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 80mA. The device features a transition frequency of 150MHz and a maximum power dissipation of 100mW. It includes an integrated base resistor (R1) of 10 kOhms, simplifying circuit design and reducing component count. Typical applications for this transistor include general-purpose switching and amplification circuits, commonly found in consumer electronics and industrial control systems. The transistor type is NPN - Pre-Biased, with a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage. The Vce saturation is a maximum of 250mV at 300µA base current and 10mA collector current. The collector cutoff current is specified at a maximum of 500nA. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
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