UNR32A4G0L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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The Panasonic Electronic Components UNR32A4G0L is an NPN pre-biased bipolar transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 80mA. With a transition frequency of 150MHz and a power dissipation of 100mW, it is suitable for applications requiring signal amplification and switching. The internal base resistor (R1) is specified at 10 kOhms, and the emitter base resistor (R2) is 47 kOhms, providing fixed biasing for simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. It is supplied in a SSSMini3-F2 package (SOT-723 equivalent) and is available on tape and reel. This device finds utility in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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