UNR32A3G0L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR32A3G0L is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component, housed in a SSSMini3-F2 package (SOT-723), features integrated base resistors (R1 = 47 kOhms, R2 = 47 kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 80 mA. The transistor exhibits a transition frequency of 150 MHz and a power dissipation of 100 mW. Typical DC current gain (hFE) is a minimum of 80 at 5 mA collector current and 10 V collector-emitter voltage. Saturation voltage (Vce Sat) is 250 mV maximum at 300 µA base current and 10 mA collector current. Applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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