UNR32A1G0L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR32A1G0L is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 80mA. With a transition frequency of 150MHz and a maximum power dissipation of 100mW, it offers a minimum DC current gain (hFE) of 35 at 5mA, 10V. The integrated base resistor (R1) is 10 kOhms, and the emitter base resistor (R2) is 10 kOhms, simplifying circuit design. The UNR32A1G0L is packaged in a SSSMini3-F2 (SOT-723) and supplied on tape and reel. This device is commonly utilized in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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