UNR321000L
TRANS PREBIAS NPN 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components UNR321000L is an NPN pre-biased bipolar transistor designed for surface mounting in the SSSMini3-F1 package (SOT-723). This component features a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. The transistor exhibits a transition frequency of 150MHz and a maximum power dissipation of 100mW. It includes an integrated base resistor (R1) of 47 kOhms, simplifying circuit design. The DC current gain (hFE) is a minimum of 160 at 5mA collector current and 10V Vce. Key specifications include a collector cutoff current of 500nA (max) and a Vce saturation voltage of 250mV at 300µA base current and 10mA collector current. This transistor is commonly utilized in industrial and consumer electronics applications requiring simplified switching and amplification stages. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
Request a Quote
Clients Also Buy
UNR52A0G0L
TRANS PREBIAS NPN 50V SMINI3
DRC2144T0L
TRANS PREBIAS NPN 50V 0.1A MINI3
DRC2123J0L
TRANS PREBIAS NPN 50V 0.1A MINI3
