UNR31AMG0L
TRANS PREBIAS PNP 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR31AMG0L is a PNP pre-biased bipolar junction transistor designed for surface mounting. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. The device offers a DC current gain (hFE) of at least 80 at 5mA and 10V, with a transition frequency of 80MHz. The UNR31AMG0L includes integrated base resistors of 2.2 kOhms (R1) and emitter base resistors of 47 kOhms (R2). It is supplied in a SSSMini3-F2 package, equivalent to SOT-723, and is available on tape and reel. This transistor type is suitable for applications in industrial and consumer electronics requiring compact, pre-biased switching and amplification solutions. Maximum power dissipation is 100mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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