UNR31AEG0L
TRANS PREBIAS PNP 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR31AEG0L is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features integrated base resistors (R1 = 47 kOhms, R2 = 22 kOhms), simplifying circuit design. It offers a 50 V collector-emitter breakdown voltage and a maximum collector current of 80 mA. The transistor exhibits a transition frequency of 80 MHz and a minimum DC current gain (hFE) of 60 at 5 mA and 10 V. Its typical saturation voltage is 250 mV at 300 µA base current and 10 mA collector current. Packaged in a SSSMini3-F2 (SOT-723) case and supplied on tape and reel, this device is suitable for use in portable electronics and general-purpose switching applications. The maximum power dissipation is rated at 100 mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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