UNR31A4G0L
TRANS PREBIAS PNP 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR31A4G0L is a PNP pre-biased bipolar junction transistor (BJT) in a SSSMini3-F2 (SOT-723) surface-mount package. This device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 80mA. The integrated base resistor (R1) is 10 kOhms and the emitter base resistor (R2) is 47 kOhms, providing built-in biasing. It features a transition frequency of 80MHz and a maximum power dissipation of 100mW. The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage at 300µA base current and 10mA collector current is a maximum of 250mV. This component is commonly utilized in automotive, industrial, and consumer electronics applications requiring simplified biasing and reduced component count. The UNR31A4G0L is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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