UNR31A0G0L
TRANS PREBIAS PNP 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR31A0G0L is a PNP, pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 80mA. With a transition frequency of 80MHz and a power dissipation of 100mW, it is suitable for applications requiring signal amplification and switching. The integrated base resistor (R1) is 47 kOhms, and the device offers a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. Its small SSSMini3-F2 package (SOT-723) makes it ideal for compact electronic designs. This transistor finds use in various industrial and consumer electronics, including but not limited to control circuits and signal conditioning. The UNR31A0G0L is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2 |
| Current - Collector (Ic) (Max) | 80 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 47 kOhms |
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