UNR222600L
TRANS PREBIAS NPN 20V 0.6A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR222600L is an NPN pre-biased bipolar transistor featuring a collector current of 600 mA and a collector-emitter breakdown voltage of 20 V. This device offers a transition frequency of 200 MHz and a maximum power dissipation of 200 mW. It includes an integrated base resistor of 4.7 kOhms. The UNR222600L is packaged in a Mini3-G1 (TO-236-3, SC-59, SOT-23-3) surface mount package, supplied on tape and reel. Applications include general switching and amplification in industrial and consumer electronics. The DC current gain (hFE) is a minimum of 100 at 100 mA and 10 V. Collector cutoff current (ICBO) is a maximum of 1µA. Vce saturation is 80mV at 2.5mA base current and 50mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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