UNR222400L
TRANS PREBIAS NPN 50V 0.5A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR222400L is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The intrinsic base resistor (R1) is 2.2 kOhms, and the emitter-base resistor (R2) is 10 kOhms, simplifying circuit design by eliminating external biasing components. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, this transistor is suitable for general-purpose switching and amplification in consumer electronics and industrial control systems. The device is supplied in a Mini3-G1 (TO-236-3, SC-59, SOT-23-3) package and is available on tape and reel. The minimum DC current gain (hFE) is 60 at 100mA and 10V, with a collector cutoff current of 1µA. Vce saturation is specified at 250mV at 5mA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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